▎ 摘　　要

Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H-2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA residue as well as the methoxy and carboxyl function groups without causing noticeable damage to the graphene. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).