▎ 摘　　要

Solution-processed graphene oxide/chitosan composite electrolyte film showed a large specific gate electric-double-layer capacitance of similar to 3.16 mu F/cm(2) at 1 Hz. Indium-zinc-oxide (IZO) homojunction thin-film transistors (TFTs) on paper substrates using such composite electrolytes as gate dielectrics showed a good electrical performance and a high stability. Flexible IZO-based homojunction TFTs showed a high drain current ON/OFF ratio of similar to 1.8 x 10(7), a large field-effect mobility of > 30 cm(2)V(-1)s(-1), and a low subthreshold swing of 90 mV/decade. At last, a resistor-loaded inverter with a maximal conversion factor of 6.7, and a dual in-planegate NAND logic operationwere also demonstrated on such flexible IZO-based TFTs. Such oxide-based homojunction TFTs on paper substrates have potential applications in next-generation low-cost and portable new-concept electronics.