▎ 摘　　要

A cooled scanning probe microscope (SPM) has been used to image cyclotron orbits of electrons through high-mobility graphene in a magnetic field. In a hBN-graphene-hBN device patterned into a hall bar geometry, the magnetic field focuses a current I-i injected from one narrow contact into another narrow contact located an integer number of cyclotron diameters away, creating a voltage V-c. The degree of focusing is measured by the transresistance R-m = V-c/I-i. In SPM, the tip can either enhance or decrease conductance in the sample by deflecting electrons into or away from the second contact, respectively. Our SPM images of magnetic focusing feature a region in which the tip transitions from enhancing to decreasing the conductance in the sample where the change in transresistance caused by the tip is equal to zero. In this paper, we investigate how the location of this region in the graphene sample changes as we modulate the electron density n and magnetic field B. By plotting line-cuts of the change in trans-resistance for different electron densities and magnetic fields, we identify trends in the inflection point where the tip changes from enhancing to decreasing the conductance in the sample. From the location of each transition region, we show that the cyclotron diameter of the electron trajectories can be obtained, and explain the trends in inflection point location for different electron densities and magnetic fields.