▎ 摘　　要

A theoretical model is developed for the intrinsic generation-recombination (G-R) noise in bipolar graphene that stems from stochastic processes of interband carrier transitions in the zero-gap single layer. The correlation functions are obtained for microscopic Langevin sources of fluctuations relevant to the considered G-R processes. The spectral density of the G-R fluctuations is of a Lorentz shape with the characteristic frequency f(c) = 1/2 pi tau(r), where the recombination time tau(r) is expressed through the G-R rates and the carrier density. Numerical estimates clearly demonstrate the potential dominance of G-R noise over the Nyquist and flicker noise in monolayer graphene. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3626820]