• 文献标题:   DFT study on the electronic structure and optical properties of N, Al, and N-Al doped graphene
  • 文献类型:   Article
  • 作  者:   ZHOU X, ZHAO CH, WU GF, CHEN JH, LI YQ
  • 作者关键词:   graphene, dft, electronic structure, optical property, n al nal doping
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:   Guangxi Univ
  • 被引频次:   7
  • DOI:   10.1016/j.apsusc.2018.08.015
  • 出版年:   2018

▎ 摘  要

The electronic structures and optical properties of pure, N-doped, Al-doped, and N-Al co-doped graphenes were studied by the first-principle calculation. The pure graphene is a zero bandgap semiconductor. The energy gaps were opened after N, Al, and N-Al doping. The gap value of N-Al co-doped graphene is the largest, 0.47 eV, then Al-doped graphene, 0.40 eV, and N-doped graphene, 0.21 eV. For N-doped graphene, carbon atom loses electrons, nitrogen atom gains electrons, while carbon gains electrons, aluminum atom loses electrons for Al-doped graphene. For N-Al co-doped graphene, aluminum atom loses a bit more electrons (2.31 e) than that in Al-doped graphene (2.27 e), while nitrogen atom gains a lot more electrons (- 0.76 e) than that in N-doped graphene (- 0.27 e). After N, Al, N-Al doping, the absorption peaks of graphene become weak, especially low frequency peaks of N and Al doping. The absorption curve of N-Al doped graphene is similar with that of pure graphene. However, the absorption peak of low frequency for N-Al doped graphene shifts to low energy relative to pure graphene, showing that it is easier for the transitions between pi and pi*, and lead to the opened gap.