▎ 摘　　要

A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included in the drain-source current. In addition, a simulation approach based on Monte Carlo is employed in order to calculate ionisation coefficient. Finally, the current is calculated including ionisation and not including ionisation and compared together at different conditions in order to investigate the effect of ionisation. The results show that this mechanismis not ignorable in graphene-based transistors as it was in most cases in silicon transistors. In addition, the breakdown voltage has been calculated analytically and compared with fabrication results of couterparts in silicon technology.