• 文献标题:   Screening-induced transport at finite temperature in bilayer graphene
  • 文献类型:   Article
  • 作  者:   LV M, WAN SL
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Sci Technol China
  • 被引频次:   21
  • DOI:   10.1103/PhysRevB.81.195409
  • 出版年:   2010

▎ 摘  要

We calculate the temperature-dependent charge carrier transport of bilayer graphene (BLG) impacted by Coulomb impurity scattering within the random-phase approximation. We find the polarizability is equal to the density of states at zero momentum transfer and is enhanced by a factor log 4 at large momentum transfer for arbitrary temperature while around k(F) it has nonmonotonic temperature-dependent behavior. The sharp cusp of static polarizability arising from the strong 2k(F) backward scattering would be smooth by the increasing temperatures. In all wave-vector regimes, the static polarizability shows a weak temperature dependence, representing the distinctive electron property of BLG. We also obtain the asymptotic behaviors of conductivity of BLG at low and high temperature, and find the behavior of BLG turns from a two-dimensional electron gas like linear temperature metallic behavior to a single-layer graphene and quadratic temperature insulating behavior as the temperature increases.