▎ 摘　　要

Graphene, a single layer of graphite has high mobility due to its sp(2) hybridized carbon atoms arrange in two-dimensional layer hexagonal fashion is believed to be a potential candidate to replace the current silicon transistor. However graphene is a zero band-gap material which is a major obstacle in electronic devices since most of the devices need on/off switching. To overcome this problem graphene nanoribbon is introduced where the band-gap of graphene nanoribbon can be easily obtained by controlling the width of the ribbon. In schottky diode, graphene nanoribbon is in contact with metal terminal and schottlw barrier is formed. In this paper, two schottky barrier properties are studied, depletion region width and potential barrier. The model of depletion region width is derived analytically by using the Poisson equation and the model of potential barrier is derived from the integration of the electric field through the space charge region which also known as depletion region. The study on the relationship between junction electric field with depletion region width is presented. Besides that, the relationship between depletion region width and potential barrier is also studied. By varying the junction electric field, both the depletion region width and potential barrier are increased. Moreover the potential barrier is increasing when the depletion region width is increasing.