▎ 摘　　要

The role of hydrophilic and hydrophobic substrate with graphene is crucial to define the interfacial properties of graphene (G)-based heterostructures in the field of electronic device applications. Herein, the novel strategy of graphene wrapped hydrophilic/hydrophobic silicon nanowires (SiNWs) heterostructure is reported for highly enhanced electron field emission (EFE) studies with low turn-on field. The combined effect of sharp edged graphene layers induced by different kinds of SiNWs is envisioned to enhance field enhancement factors and turn-on voltage. The systematic results show the best EFE properties of hydrophilic SiNWs-G based field emitters, with a lower turn-on voltage of 0.53 V mu m(-1), a current density of 2.7 mA cm(-2), and a higher field enhancement factor (beta) of 14825. In addition, both the SiNWs-G-based field emitters are tested as the practical flat panel displays, where the hydrophilic-based display exhibits at low voltage as 210 V. The superior EFE performance of hydrophilic SiNWs-G based field emitters are ascribed to their large distortion field. Since more electrons can be trapped for easy tunneling, this increases the emission sites, and thereby contributes to a high enhancement field. This striking result from hydrophilic SiNWs-G field emitters can be tailored for high-performance EFE device applications.