• 文献标题:   Thermoelectric power of graphene as surface charge doping indicator
  • 文献类型:   Article
  • 作  者:   SIDOROV AN, SHEREHIY A, JAYASINGHE R, STALLARD R, BENJAMIN DK, YU QK, LIU ZH, WU W, CAO HL, CHEN YP, JIANG ZG, SUMANASEKERA GU
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   29
  • DOI:   10.1063/1.3609858
  • 出版年:   2011

▎ 摘  要

We report on simultaneous thermoelectric power and four-probe resistance measurements of chemical vapor deposition grown graphene during a degas process, as well as in exposure to various gases. For all investigated samples, a dramatic change in thermoelectric power was observed and found to be sensitive to the gas molecule charge doping on the surface of graphene. The observed p-type behavior under ambient conditions supports an electrochemical charge transfer mechanism between the graphene and oxygen redox couple, while the n-type behavior under degassed conditions is ascribed to the electron doping caused by the surface states of the SiO2/Si substrate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609858]