▎ 摘　　要

We predict the spatial and angular Goos-Hanchen (GH) and Imbert-Fedorov (IF) shifts in partial (PR) and total internal reflection (TIR) conditions for fundamental Gaussian mode beams of a wide range of wavelength (400-1300 nm) impinging upon a graphene-coated dielectric surface. The GH and IF shifts turn out to be extremely dependent upon the chemical potential of graphene along with the wavelength of the incident light, thus enabling one to appropriately choose the operating wavelength and tune the chemical potential in the desired region to obtain maximum beam shifts in graphene. We also show that the typical features of the optical beam shifts are potentially linked with the optical conductivity of single-layer graphene. We expect the current study to be of fundamental significance in the field of optoelectronics and device industry based on graphene and other 2D materials.