• 文献标题:   Defects and localization in chemically-derived graphene
  • 文献类型:   Article
  • 作  者:   CIRIC L, SIENKIEWICZ A, GAAL R, JACIMOVIC J, VAJU C, MAGREZ A, FORRO L
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Ecole Polytech Fed Lausanne
  • 被引频次:   20
  • DOI:   10.1103/PhysRevB.86.195139
  • 出版年:   2012

▎ 摘  要

We have performed electron spin resonance (ESR) measurements on a large assembly of graphene oxide (GO) and reduced graphene oxide (RGO) flakes. In GO samples the Curie tail is coming from 1.4 x 10(18) cm(-3) of localized spins. Although reduction of GO was expected to reestablish the pristine properties of graphene, no Pauli-like contribution was detected and only a low concentration of 1.2 x 10(16) cm(-3) spin carrying defects were measured. Our study, completed by resistivity measurements, shows that the carrier transport in RGO samples is dominated by hopping. The incomplete reduction of GO leaves behind a large number of defects, presumably the majority of which are ESR silent, causing the Anderson localization of the electronic states. Slight doping with potassium indicates the appearance of a Pauli contribution in the spin susceptibility.