▎ 摘　　要

An efficient one-dimensional model to investigate the high frequency performance of Graphene Base Transistor (GBT) has been developed and used to provide guidelines for the design and optimization of THz operation devices. The simulation results show that cut-off frequencies in the THz range are feasible over a quite broad range of the model parameters, assessing the promising potential of the intrisic GBT device. The model indicates that, for an optimized GBT, the structure should exploit dielectric materials with not too large permittivity and small energy barriers with respect to the metal emitter. (C) 2013 Elsevier B.V. All rights reserved.