▎ 摘　　要

We investigate electric transport in graphene on SiO2 in the high held limit and report on the formation of p-n junctions. Previously, doping of graphene has been achieved by using multiple electrostatic gates, or charge transfer from adsorbants. Here we demonstrate a novel approach to create p-n junctions by changing the local electrostatic potential in the vicinity of one of the contacts without the use of extra gates. The approach is based on the electronic modification riot of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled.