• 文献标题:   Reactivity of Monolayer Chemical Vapor Deposited Graphene Imperfections Studied Using Scanning Electrochemical Microscopy
  • 文献类型:   Article
  • 作  者:   TAN C, RODRIGUEZLOPEZ J, PARKS JJ, RITZERT NL, RALPH DC, ABRUNA HD
  • 作者关键词:   graphene, defect, scanning electrochemical microscopy, electrochemistry, ophenylenediamine
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Cornell Univ
  • 被引频次:   83
  • DOI:   10.1021/nn204746n
  • 出版年:   2012

▎ 摘  要

Imperfections that disrupt the sp(2) conjugation of graphene can alter its electrical, chemical, and mechanical properties. Here we report on the examination of monolayer chemical vapor deposited graphene imperfections using scanning electrochemical microscopy in the feedback mode. It was found that the sites with a large concentration of defects are approximately 1 order of magnitude more reactive, compared to more pristine graphene surfaces, toward electrochemical reactions. Furthermore, we successfully passivated the activity of graphene defects by carefully controlling the electropolymerization conditions of o-phenylenediamine. With further electropolymerization, a thin film of the polymer was formed, and it was found to be insulating in nature toward heterogeneous electron transfer processes. The use of spatially resolved scanning electrochemical microscopy for detecting the presence and the "healing" of defects on graphene provides a strategy for in situ characterization and control of this attractive surface, enabling optimization of its properties for application in electronics, sensing, and electrocatalysis.