▎ 摘　　要

By forming a thin 3C-SiC film on Si substrates and by annealing it at similar to 1500K in vacuo, few-layer graphene is formed epitaxially on Si substrates. In this graphene-on-silicon (GOS) technology, graphene grows at least on three major low-index Si surfaces: (1 1 1), (1 0 0) and (1 1 0), which allows tuning of structural and electronic properties of epitaxial graphene by simply controlling the crystallographic orientation of the surface. A typical example can be found in the two types of graphene formed on 3C-SiC(1 1 1) surfaces; the one on 3C-SiC(1 1 1)/Si(1 1 1) shows a Bernal stacking with an interfacial buffer layer, while the one on 3C-SiC(1 1 1)/Si(1 1 0) shows a non-Bernal stacking without an interfacial buffer layer. Inserting an AlN interlayer between Si and 3C-SiC significantly contributes to improvement of the GOS quality. Moreover, thanks to the sealing effect of the AlN layer against Si out-diffusion, we can apply chemomechanical polishing of SiC surface to reduce the surface roughness, which can further accentuate the effect of H-2 annealing of the surface. As a result, a D to G band intensity ratio as low as 0.4 is obtained.