• 文献标题:   Bending and flexural phonon scattering: Generalized Dirac equation for an electron moving in curved graphene
  • 文献类型:   Article
  • 作  者:   KERNER R, NAUMIS GG, GOMEZARIAS WA
  • 作者关键词:   graphene, flexural mode, strain, dirac equation, mathieu equation, electronic properties of graphene
  • 出版物名称:   PHYSICA BCONDENSED MATTER
  • ISSN:   0921-4526 EI 1873-2135
  • 通讯作者地址:   Univ Paris 06
  • 被引频次:   16
  • DOI:   10.1016/j.physb.2012.01.129
  • 出版年:   2012

▎ 摘  要

A generalized Dirac equation is derived in order to describe charge carriers moving in curved graphene, which is the case for temperatures above 10 K due to the presence of flexural phonons, or in bent graphene. Such interaction is taken into account by considering an induced metric, in the same spirit as the general relativity approach for the description of fermionic particle moving in a curved space-time. The resulting equation allows to include in a natural way the presence of other phonon branches as well as an external electromagnetic field. For a monochromatic sinusoidal bending of the graphene, the problem can be recasted as a Mathieu equation with a complex driven parameter, indicating the possibility of a resonance pattern. (C) 2012 Published by Elsevier B.V.