• 文献标题:   Graphene growth by metal etching on Ru(0001)
  • 文献类型:   Article
  • 作  者:   STARODUB E, MAIER S, STASS I, BARTELT NC, FEIBELMAN PJ, SALMERON M, MCCARTY KF
  • 作者关键词:   density functional theory, edge dislocation, electron microscopy, etching, graphene, island structure, ruthenium, scanning tunnelling microscopy
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Sandia Natl Labs
  • 被引频次:   48
  • DOI:   10.1103/PhysRevB.80.235422
  • 出版年:   2009

▎ 摘  要

Low-energy electron microscopy reveals a mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density-functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density.