▎ 摘　　要

Graphene preparation by the method of chemical vapour deposition on SiC substrates is described. Despite very low growth temperature (1080 degrees C) and with use of methane atmosphere, carbon layers in the form of multi-layer graphene were prepared. Graphene quality was verified by means of available analytical methods: Raman spectroscopy, X-ray photoelectron spectroscopy, Van der Paw method.