• 文献标题:   The effect of traps on the performance of graphene field-effect transistors
  • 文献类型:   Article
  • 作  者:   ZHU J, JHAVERI R, WOO JCS
  • 作者关键词:   field effect transistor, graphene
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Calif Los Angeles
  • 被引频次:   14
  • DOI:   10.1063/1.3428785
  • 出版年:   2010

▎ 摘  要

This paper studies the performance degradation of graphene field-effect transistors due to the presence of traps. The mobile charge modulation by gate voltage is degraded because of immobile trapped charges. As a result the current is reduced and the on/off ratio is decreased. Extracted mobility using transconductance method is shown to be underestimated considerably due to the effect of traps.(C) 2010 American Institute of Physics. [doi:10.1063/1.3428785]