1. 平台首页
  2. 国际论文信息
  • 文献标题:   High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors
  • 文献类型:   Article
  • 作　　者:   DENG M, FADIL D, WEI W, PALLECCHI E, HAPPY H, DAMBRINE G, DE MATOS M, ZIMMER T, FREGONESE S
  • 作者关键词:   transistor, noise measurement, graphene, integrated circuit modeling, silicon carbide, substrate, scattering parameter, fieldeffect transistor fet, graphene, highfrequency hf noise, smallsignal model, sourcepull
  • 出版物名称:   IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES
  • ISSN:   0018-9480 EI 1557-9670
  • 通讯作者地址:   Univ Bordeaux
  • 被引频次:   0
  • DOI:   10.1109/TMTT.2020.2982396
  • 出版年:   2020

▎ 摘　　要

This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Omega using the F-50 method, was verified by additional source-pull measurements, with special care for the GFET stability. The four noise parameters were then extracted by using the validated F-50 model up to 18 GHz, and the correlations between noise and small-signal parameters were shown for two different configurations: top-gated and back-gated GFETs.