▎ 摘　　要

Amorphous structure materials have isotropic characteristics, which provides open active diffusion channels to facilitate the sodium ion diffusion and transport. In this work, amorphous SnSe quantum dots (similar to 2 nm) anchoring on the nitrogen doped graphene (a-SnSe/rGO) are rational designed by facile one-pot solvothermal synthesis. The amorphous SnSe structure largely suppresses the volume change comes from the tin alloying reaction process, further decreases the particle pulverization. Strong Sn-C, Sn-O-C, and Se-C chemical bonds form between a-SnSe and graphene, guaranteeing rapid electrical transport channels during the sodiation/de-sodiation process. As a result, it presents superior electrochemical reversibility of 397 mA h g(-1) at 1 A g(-1) after 1400 cycles with 0.014% capacity fading per cycle as sodium ion battery anode. The excellent rate performance and the high proportion of pseudocapacitance contribution for a-SnSe/rGO also make it very suitable for the anode materials for sodium ion capacitor. It exhibits high energy density of 58 Wh k g(-1) after 5000 cycles at 1 Ag-1 in optimized a-SnSe/rG parallel to|AC sodium ion capacitor. The strategy of fabrication of amorphous nanostructure material provides brand new thoughts for development and application of metal chalcogenide in energy storage devices.