▎ 摘　　要

The temperature coefficient of resistance (TCR) is the unique property of a material and plays a crucial role in defining the boundaries of electronic devices. Due to the semimetal behaviour of graphene, its TCR can be varied from near zero to very high and depends upon the doping, defects, and other structural properties. There is a significant impact of processing techniques and their parameters on the properties of graphene. Here, the effect of milling parameters on the crystallinity of graphene ink has been studied, and a 14% increase in crystallinity was found with the increase in milling time. The TCR of graphene ink-printed resistors has been analyzed from 123 to 423 K, and a 40% positive shift in TCR corresponding to variation in crystallinity has been observed. This methodology can be helpful to fabricate electronic components with variable TCR from single ink composition by just varying processing parameters.