• 文献标题:   Resonant Tunneling in Graphene Pseudomagnetic Quantum Dots
  • 文献类型:   Article
  • 作  者:   QI ZN, BAHAMON DA, PEREIRA VM, PARK HS, CAMPBELL DK, CASTRO NETO AH
  • 作者关键词:   graphene, strain, magnetic quantum dot, quantum transport, pseudomagnetic field, atomistic calculation
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Natl Univ Singapore
  • 被引频次:   37
  • DOI:   10.1021/nl400872q
  • 出版年:   2013

▎ 摘  要

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.