▎ 摘　　要

The Hall effect and the diagonal resistance, which indicates a residual resistivity rho(xx) approximate to h/4e(2), are experimentally examined over the p <-> n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole-densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n <-> p transition. (C) 2016 AIP Publishing LLC.