▎ 摘　　要

High-quality customized monolayer graphene structures are a prerequisite for various applications such as electronics, optoelectronics, and energy devices. Top-down photolithography is the main method for graphene patterning, but it is greatly affected by complex manufacturing processes and residual photoresist. Recently, bottom-up methods based on catalyst or precursor patterning have been developed. Although these methods can achieve high-resolution graphene patterns, it is difficult to control the number of graphene layers and has a high defect density. Here, the authors propose a selective area reconstruction method for in-situ growth of high-quality monolayer graphene structures on copper substrates. The method utilizes selective oxidation and high-temperature reduction technologies, which can effectively regulate the surface characteristics of the copper substrate, thereby precisely controlling the nucleation and growth behavior of the customized graphene structure. The feature size of the fabricated graphene structure is less than 1 mu m and it has high monolayer coverage and extremely low defect density. The performance of the photoluminescence device and photodetector based on the customized monolayer graphene structure is characterized. The method provides a new approach for the direct growth of high-quality, scalable, and high-precision functional graphene structures, which is expected to have great potential in the optoelectronic applications.