▎ 摘　　要

Graphene/silicon junction based photodetectors have attracted great interest due to their superior characteristics like large photosensitive area, fast photocarrier collection and low dark current. Currently, the weak optical absorption and short photocarrier lifetime of graphene remain major limitations for detection of infrared light with wavelengths above 1.2 mu m. Here, we elucidate the mechanism of photocarrier transport in graphene/silicon junction based photodetector and propose a theoretical model to study the design and effect of finger-electrode structures on the photocurrent in graphene. We demonstrate that the top finger-like electrode in graphene/silicon photodetector can be designed to enhance the photocarrier collection efficiency in graphene by reducing the average transport distance of photocarriers. Therefore, the photoresponsivity of the graphene/silicon junction based photodetector can be increased. Our results have successfully demonstrated that by optimizing the design of finger electrodes, 4 times enhancement of photocurrents in graphene can be obtained at room temperature.