• 文献标题:   Valley-isospin dependence of the quantum Hall effect in a graphene p-n junction
  • 文献类型:   Article
  • 作  者:   TWORZYDLO J, SNYMAN I, AKHMEROV AR, BEENAKKER CWJ
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Univ Warsaw
  • 被引频次:   54
  • DOI:   10.1103/PhysRevB.76.035411
  • 出版年:   2007

▎ 摘  要

We calculate the conductance G of a bipolar junction in a graphene nanoribbon, in the high-magnetic-field regime where the Hall conductance in the p-doped and n-doped regions is 2e(2)/h. In the absence of intervalley scattering, the result G=(e(2)/h)(1-cos Phi) depends only on the angle Phi between the valley isospins (=Bloch vectors representing the spinor of the valley polarization) at the two opposite edges. This plateau in the conductance versus Fermi energy is insensitive to electrostatic disorder, while it is destabilized by the dispersionless edge state which may exist at a zigzag boundary. A strain-induced vector potential shifts the conductance plateau up or down by rotating the valley isospin.