• 文献标题:   Asymmetric Junctions Boost in-Plane Thermal Transport in Pillared Graphene
  • 文献类型:   Article
  • 作  者:   SAKHAVAND N, SHAHSAVARI R
  • 作者关键词:   junction configuration, pillared graphene, hybrid nanostructure, thermal transport, asymmetry
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244
  • 通讯作者地址:   Rice Univ
  • 被引频次:   5
  • DOI:   10.1021/acsami.7b16162
  • 出版年:   2017

▎ 摘  要

Hybrid 3D nanoarchitectures by covalent connection of 1D and 2D nanomaterials are currently in high demands to overcome the intrinsic anisotropy of the parent materials. This letter reports the junction configuration mediated thermal transport properties of Pillared Graphene (PGN) using reverse nonequilibrium molecular dynamics simulations. The asymmetric junctions can offer similar to 20% improved in-plane thermal transport in PGN, unlike the intuition that their wrinkled graphene sheets cause phonon scattering. This asymmetric trait, which entails lower phonon scattering provides a new degree of freedom to boost thermal properties of PGN and potentially other hybrid nanostructures.