▎ 摘　　要

We report pulsed laser deposition (PLD) using a solid carbon source as a viable technique to obtain direct, transfer-free monolayer and bilayer graphene on SiO2. First, a 300 nm thick nickel film is deposited on a silicon dioxide layer (300 nm) grown in a Si substrate. Next, PLD of carbon is performed at 1010 degrees C. The nickel film is then removed, and an interfacial graphene is obtained directly on the silicon dioxide film, without the need of a transfer process. Raman spectroscopy confirms the presence of high-quality bilayer graphene with a coverage of better than 60%. (C) 2013 AIP Publishing LLC.