▎ 摘　　要

Trilayer graphene nanoribbon as a superlative semiconductor promises potential applications in the diodes, FETs, gas and biosensors. It is a suitable candidate for nanoelectronic applications due to attractive electronic, mechanical, thermoelectric and optoelectronics properties. The aim of the present paper is to analytically investigate the momentum relaxation mean free time and path and also ionization coefficient of trilayer graphene nanoribbon in nanoscale FETs. The models are derived based on energy band structure and calculating the effective mass, carrier velocity and scattering rate. Furthermore, the effects of interlayer potential energies, temperature and potential difference of layers are also taken into account on the modeled parameters. As a result, the obtained results and findings of this research are in rational agreement with published data, in terms of value and trend. The results and figures of merit for the proposed device showed a promising performance for transistor applications.