▎ 摘　　要

Preparation parameter of cathode for DSSC is crucial in determining the performance of the device. In this work, nickel-palladium-reduced graphene oxide (NiPd-rGO) cathode has successfully been prepared via liquid-phase deposition (LPD) technique. The effect of NiPd deposition temperature of the properties of NiPd-rGO sample has been studied. The influence of the deposition temperature on the photovoltaic parameters of the DSSC using NiPd-rGO cathodes has also been investigated. The thickness of the sample is found to increase with the deposition temperature. The morphology, elemental composition and optical transmittance are significantly affected by the deposition temperature. The device using NiPd-rGO cathode prepared at NiPd deposition temperature of 60 degrees C produces the highest PCE of 3.07%. This is due to this device owns the lowest R-ct and highest R-cr.