• 文献标题:   Quantum Hall Effect in Hydrogenated Graphene
  • 文献类型:   Article
  • 作  者:   GUILLEMETTE J, SABRI SS, WU BX, BENNACEUR K, GASKELL PE, SAVARD M, LEVESQUE PL, MAHVASH F, GUERMOUNE A, SIAJ M, MARTEL R, SZKOPEK T, GERVAIS G
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007
  • 通讯作者地址:   McGill Univ
  • 被引频次:   25
  • DOI:   10.1103/PhysRevLett.110.176801
  • 出版年:   2013

▎ 摘  要

The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 cm(2)/V . s and corresponding Ioffe-Regel disorder parameter (k(F)lambda)(-1) >> 1. In a zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of the order of 250h/e(2). The application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of h/2e(2) at 45 T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed. DOI: 10.1103/PhysRevLett.110.176801