• 文献标题:   Low-temperature solution-processed graphene oxide derivative hole transport layer for organic solar cells
  • 文献类型:   Article
  • 作  者:   ZHENG Q, FANG GJ, CHENG F, LEI HW, QIN PL, ZHAN CM
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Wuhan Univ
  • 被引频次:   8
  • DOI:   10.1088/0022-3727/46/13/135101
  • 出版年:   2013

▎ 摘  要

A Mo6+ cation modified graphene oxide (GO) derivative of GO-Mo was synthesized by a low-temperature solution method with different amounts of ammonium heptamolybdate (Mo-precursor) added into the GO solutions. The GO-Mo products were characterized through Raman microspectroscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy measurements and their photoelectric properties were systematically investigated. Organic bulk heterojunction solar cells with GO-Mo as the hole transport layer (HTL) were fabricated and their performance as a function of the number of GO-Mo layers was also studied. The performance of these devices was much better than that of the device with GO as the HTL. The best performance of the device with a power conversion efficiency of 2.61%, an open-circuit voltage of 0.59V and a short-circuit current density of 9.02 mA cm(-2) were obtained. Finally, the effect of the Mo-precursor weight in the GO solution on the device performance was discussed.