▎ 摘　　要

This paper reports the preliminary work on the DSSC utilizing reduced graphene oxide (RGO) films counter electrode. The effect of graphene oxide (GO) content on the performance of the DSSC has been investigated. The FESEM images show that the sample contains conductive RGO and non-conductive GO. The RGO samples are crystalline with the diffraction peak at 22.5 degrees. It was found that the short-circuit current density (J(SC)) and power conversion efficiency (eta) of the device are significantly affected by the GO content. The DSSC utilizing RGO film counter electrode prepared using 2.5 mg GO performed the highest J(SC), V-oc and eta of 0.77 mA cm(-2), 0.613 V and 0.09 %, respectively. The highest performance of the device is due to highest electronic conductivity, the lowest leak current, bulk resistance (R-b), charge transfer resistance (R-ct) and longest charge carrier lifetime. The lower leak current, R-b and R-ct, the longer carrier lifetime resulted in the higher J(SC) and eta.