▎ 摘　　要

Copper indium gallium selenide (CIGS) is the most promising thin film solar cell technology. However, its high performance is hampered by its poor short-wavelength response. The short-wavelength response can be enhanced via photon downconversion using quantum dots. Unfortunately, most graphene quantum dots (GQDs) are not suitable as downconverters in CIGS cells owing to their low photoluminescence quantum yield (PL QY) and/or low Stokes shift. Herein, an ultrahigh PL QY (99%) and a large Stokes shift (98 nm) are achieved for N-doped GQDs via a novel method. The performance of a CIGS solar cell is enhanced via photon downconversion and the light-trapping effect using the NGQDs. The effectiveness of the NQGDs is manifested in a conversion efficiency (eta) of 15.31%. In addition, improvements in the short-circuit current density from 30.69 mA/cm(2) to 31.77 mA/cm(2) and fill factor from 71.25% to 73.09% are observed. The n and J(0) values are decreased by insertion of NGQDs, indicating a reduction in the recombination losses.