▎ 摘　　要

High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kX Omega.mu m from 2.1 k Omega.mu m as the peripheral length increased from 312 to 792 lm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 x 10(5) times lower than that of top-contacted graphene. (C) 2015 AIP Publishing LLC.