• 文献标题:   Hydrogen storage in Beryllium decorated graphene with double vacancy and porphyrin defect - A first principles study
  • 文献类型:   Article
  • 作  者:   MAHENDRAN M, REKHA B, SEENITHURAI S, PANDYAN RK, KUMAR SV
  • 作者关键词:   graphene, porphyrin defect, hydrogen storage, dft
  • 出版物名称:   FUNCTIONAL MATERIALS LETTERS
  • ISSN:   1793-6047 EI 1793-7213
  • 通讯作者地址:   Thiagarajar Coll Engn
  • 被引频次:   1
  • DOI:   10.1142/S1793604717500230
  • 出版年:   2017

▎ 摘  要

Beryllium (Be)-decorated graphene with 585 double carbon vacancy defect and nitrogen-doped porphyrin defect are investigated for hydrogen storage applications using the first principle calculation based on density functional theory. It is found that the Be atom disperses well in the defective sites of graphene and prevents clustering. For the case of Be-decorated 585 double vacancy graphene, only two H-2 molecules are adsorbed via Kubas interaction with the stretched H-H bond length of 0.8A degrees. In Be-decorated porphyrin defect graphene system, four H-2 molecules are molecularly chemisorbed with the H-H bond length of 0.77 A degrees The chemisorptions are due to the hybridization between Be-p orbital and the H-sigma orbital. The average binding energy of H-2 molecule is found to be 0.43 eV/H-2 which lies within the required range that can permit recycling of H2 molecules under ambient conditions.