• 文献标题:   Atomic layer deposition of ZnO on graphene for thin film transistor
  • 文献类型:   Article
  • 作  者:   LIU RS, PENG MF, ZHANG HY, WAN X, SHEN MI
  • 作者关键词:   composite material, carbon material, electrical propertie, thin film, electronic material
  • 出版物名称:   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • ISSN:   1369-8001 EI 1873-4081
  • 通讯作者地址:   Hunan Univ
  • 被引频次:   12
  • DOI:   10.1016/j.mssp.2016.09.016
  • 出版年:   2016

▎ 摘  要

A ZnO/graphene composite thin film was obtained by depositing ZnO on graphene through an Atomic Layer Deposition (ALD) process. The graphene layer was synthesized through a Chemical Vapor Deposition (CVD) process. The achievement of ZnO deposition on graphene was attributed to the Perylene Tetracarboxylic Acid (PTCA) treatment on graphene. Both ZnO Thin Film Transistor (TFT) and ZnO/graphene TFT were fabricated and tested. The results show that both of them displayed a high ON/OFF ratio, while ZnO/graphene TFT displayed an enhanced carrier mobility over ZnO TFT.