• 文献标题:   Synthesis and optoelectronic properties of reduced graphene oxide/InP quantum dot hybrids
  • 文献类型:   Article
  • 作  者:   JIANG GH, SU YJ, LI M, HU J, ZHAO B, YANG Z, WEI H
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Shanghai Jiao Tong Univ
  • 被引频次:   3
  • DOI:   10.1039/c6ra22858e
  • 出版年:   2016

▎ 摘  要

Graphene/quantum dot (QD) hybrids have recently emerged as a new class of functional materials due to the enhancement of exciton dissociation and electron transport between graphene and QDs, giving potential applications in photocatalysts, photodetectors and photovoltaics. Herein, we report a simple approach to synthesize reduced graphene oxide (rGO)-indium phosphide (InP) QD hybrids, wherein the growth of InP QDs on graphene nanosheets and the reduction of GO occur simultaneously. The electron microscopy indicated that uniform InP QDs with size of 3.4-5.5 nm were well distributed on the rGO nanosheets. The charge transfer between rGO and InP QDs was analysed using Raman and PL spectra, confirming that the hybrids enable efficient separation of the photo-induced charges. The optoelectronic properties of the rGO/InP QD hybrids have also been investigated. Our results suggest that the hybrids exhibit a sensitive photoelectric response under blue light irradiation.