▎ 摘　　要

We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by nonlocal resistance (R-NL) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multiterminal device responses, the presence of a nonuniform local band gap is shown to give rise to valley-dependent scattering and a finite Fermi-surface contribution to the valley Hall conductivity, related to characteristics of R-NL. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hexagonal boron nitride superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene and a route towards valley-dependent electron optics, by materials and device engineering.