• 文献标题:   Enhancement of the carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) by incorporating reduced graphene oxide
  • 文献类型:   Article
  • 作  者:   LIN VJ, ZENG JJ, TSAI CL
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Natl Changhua Univ Educ
  • 被引频次:   0
  • DOI:   10.1063/1.4740073
  • 出版年:   2012

▎ 摘  要

The investigation of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO), denoted RGO-doped PEDOT:PSS shows that conductivity of RGO-doped PEDOT:PSS samples is 27 times higher than that of PEDOT:PSS at 300K. The improved electrical conductivity is considered to mainly come from the mobility enhancement. The carrier mobility in RGO-doped PEDOT:PSS samples exhibits unexpectedly strong temperature dependence, implying the domination of tunneling (hopping) at low (high) temperatures. An exhibition of high mobility of RGO-doped PEDOT:PSS samples is attributed to the increased spacing between molecules. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4740073]