▎ 摘　　要

The model of a graphene/n-type silicon (n-Si) Schottky near-field thermophotovoltaic cell (GSNTC) composed of an emitter and a photovoltaic (PV) cell is updated and investigated, in which the PV cell consists of a monolayer graphene and n-Si. Based on the recently modified thermionic emission for graphene, the formula for dark current density is rewritten. Formulas for the power and efficiency of the GSNTC are derived using the fluctuating electrodynamics. The general and optimum performances of the GSNTC are investigated. The optimization criteria of the key parameters are determined. Further, the effects of the vacuum gap and the emitter temperature on the optimum performance of the GSNTC are discussed. Our findings may provide guidance for developing high-efficiency near-field energy converters. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)