• 文献标题:   Graphene Schottky Junction on Pillar Patterned Silicon Substrate
  • 文献类型:   Article
  • 作  者:   LUONGO G, GRILLO A, GIUBILEO F, IEMMO L, LUKOSIUS M, CHAVARIN CA, WENGER C, DI BARTOLOMEO A
  • 作者关键词:   graphene, schottky barrier, diode, photodetector, heterojunction, mos metal oxide semiconductor capacitor, responsivity
  • 出版物名称:   NANOMATERIALS
  • ISSN:  
  • 通讯作者地址:   Univ Salerno
  • 被引频次:   6
  • DOI:   10.3390/nano9050659
  • 出版年:   2019

▎ 摘  要

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and temperature-dependent reverse current. Below room temperature, the reverse current grows exponentially with the applied voltage because the pillar-enhanced electric field lowers the Schottky barrier. Conversely, at higher temperatures, the charge carrier thermal generation is dominant and the reverse current becomes weakly bias-dependent. A quasi-saturated reverse current is similarly observed at room temperature when the charge carriers are photogenerated under light exposure. The device shows photovoltaic effect with 0.7% power conversion efficiency and achieves 88 A/W photoresponsivity when used as photodetector.