• 文献标题:   Weak-localization magnetoresistance and valley symmetry in graphene
  • 文献类型:   Article
  • 作  者:   MCCANN E, KECHEDZHI K, FAL KO VI, SUZUURA H, ANDO T, ALTSHULER BL
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ Lancaster
  • 被引频次:   644
  • DOI:   10.1103/PhysRevLett.97.146805
  • 出版年:   2006

▎ 摘  要

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p ->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.