• 文献标题:   Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors
  • 文献类型:   Article
  • 作  者:   BECERRIL HA, STOLTENBERG RM, TANG ML, ROBERTS ME, LIU ZF, CHEN YS, KIM DH, LEE BL, LEE S, BAO ZA
  • 作者关键词:   reduced graphene oxide, organic semiconductor, otft, compatible interface, thin film morphology, contact resistance
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Stanford Univ
  • 被引频次:   58
  • DOI:   10.1021/nn101369j
  • 出版年:   2010

▎ 摘  要

Reduced graphene oxide (RGO) is an electrically conductive carbon based nanomaterial that has recently attracted attention as a potential electrode for organic electronics Here we evaluate several solution based methods for fabricating RGO bottom contact (BC) electrodes for organic film transistors (OTFTs), demonstrate functional p and n-channel devices with such electrodes and compare their electrical performance with analogous devices containing gold electrodes We show that the morphology of organic semiconductor films deposited on RGO electrodes is similar to that observed in the channel region of the devices and that devices fabricated with RGO electrodes have lower contact resistances compared, to those fabricated with gold contacts Although the conductivity of RGO is poor compared to that of gold, RGO is still an enticing electrode material for organic electronic devices possibly owing to the retention of desirable morphological features, lower contact resistance, lower cost, and solution processability