▎ 摘　　要

A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p-and n-type characteristics under low-voltage operation (< 1 V), yielding high current densities (> 100 mA cm(-2)) and on/off current ratios (> 10(3)).