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  • 文献标题:   Low-temperature plasma-enhanced chemical vapour deposition of transfer-free graphene thin films
  • 文献类型:   Article
  • 作　　者:   OTHMAN M, RITIKOS R, HAFIZ SM, KHANIS NH, RASHID NMA, RAHMAN SA
  • 作者关键词:   pecvd graphene, deposition, raman, transmittance, conductivity
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:   Univ Malaya
  • 被引频次:   8
  • DOI:   10.1016/j.matlet.2015.06.039
  • 出版年:   2015

▎ 摘　　要

Large area transfer free graphene films were deposited at low substrate temperature of 380 degrees C by plasma-enhanced chemical vapour deposition (PECVD) using a nickel buffer layer. The Raman spectrum indicated a structure of highly disordered sp(2)-C. The current-voltage characteristics of the films showed ohmic behaviour with sheet resistance of similar to 10.1 k Omega/sq and transmittance of 70% at wavelength of 550 nm. This transfer-free graphene growth technique is reproducible and is promising for applications in devices. (C) 2015 Elsevier B.V. All rights reserved.