▎ 摘　　要

In this letter, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on Si-face 6H-SiC substrates on 50-mm wafers. The current-voltage characteristics of these devices show excellent saturation with ON-state current densities (I(on)) of 0.59 A/mm at V(ds) = 1 V and 1.65 A/mm at V(ds) = 3 V. I(on)/I(off) ratios of 12 and 19 were measured at V(ds) = 1 and 0.5 V, respectively. A peak extrinsic g(m) as high as 600 mS/mm was measured at V(ds) = 3.05 V, with a gate length of 2.94 mu m. The field-effect mobility versus effective electric field (E(eff)) was measured for the first time in epitaxial graphene FETs, where record field-effect mobilities of 6000 cm(2)/V . s for electrons and 3200 cm(2)/V . s for holes were obtained at E(eff) similar to 0.27 MV/cm.