• 文献标题:   Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and gamma-Ray Radiation Detectors
  • 文献类型:   Article
  • 作  者:   BRUS VV, MASLYANCHUK OL, SOLOVAN MM, MARYANCHUK PD, FODCHUK I, GNATYUK VA, VAKHNYAK ND, MELNYCHUK SV, AOKI T
  • 作者关键词:  
  • 出版物名称:   SCIENTIFIC REPORTS
  • ISSN:   2045-2322
  • 通讯作者地址:   Chernivtsi Natl Univ
  • 被引频次:   2
  • DOI:   10.1038/s41598-018-37637-w
  • 出版年:   2019

▎ 摘  要

We developed a new concept of X- and gamma-ray radiation semiconductor detectors based on a large area graphene/semi-insulating single crystal CdTe Schottky-type heterojunction. These two terminal electronic devices can be easily fabricated by forming a Van der Waals contact between large area chemical vapor deposited graphene and CdTe substrates in air and at room temperature. This approach significantly reduces the fabrication cost and improves the reproducibility and stability of electrical properties. A detailed analysis of their AC and DC electrical properties was carried out in order to determine the width of the space charge region and dominant charge transport mechanisms at reverse bias. The unoptimized graphene/CdTe heterojunction detectors exhibited a promising spectral resolution of Am-241 (59 keV) and Cs-137 (662 keV) isotope radiation at room temperature.